Comparative Study of 8T SRAM Cell using CMOS, FinFET and CNTFET in Nanoscale Technologies
نویسندگان
چکیده
In the world of Integrated Circuits, Complementary Metal–Oxide– Semiconductor (CMOS) has lost its credentiality during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to suppress. As a result of such SCE many alternate devices have been studied. Some of the major contestants include Multi Gate Field Effect Transistor (MuGFET) like FinFET and Carbon Nano Tube Field Effect Transistor (CNTFET). In this paper, 8T SRAM cell is analyzed in CMOS, FinFET and CNTFET structures and their performances like standby power Consumption and static noise margin are compared.
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